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vs-st103sp series www.vishay.com vishay semiconductors revision: 11-mar-14 1 document number: 94365 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 inverter grade thyristors (stud version), 105 a features ? all diffused design ? center amplifying gate ? guaranteed high dv/dt ? guaranteed high di/dt ? high surge current capability ? low thermal impedance ? high speed performance ? compression bonding ? designed and qualified for industrial level ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 typical applications ?inverters ? choppers ? induction heating ? all types of force-commutated converters ? ? electrical specifications product summary package to-209ac (to-94) diode variation single scr i t(av) 105 a v drm /v rrm 400 v, 800 v v tm 1.73 v i tsm at 50 hz 3000 a i tsm at 60 hz 3150 a i gt 200 ma t c /t hs 85 c to-209ac (to-94) major ratings and characteristics parameter test conditions values units i t(av) 105 a t c 85 c i t(rms) 165 a i tsm 50 hz 3000 60 hz 3150 i 2 t 50 hz 45 ka 2 s 60 hz 41 v drm /v rrm 400 to 800 v t q range 10 to 25 s t j -40 to 125 c voltage ratings type number voltage code v drm /v rrm , maximum repetitive peak voltage v v rsm , maximum non-repetitive peak voltage v i drm /i rrm maximum at t j = t j maximum ma vs-st103s 04 400 500 30 08 800 900
vs-st103sp series www.vishay.com vishay semiconductors revision: 11-mar-14 2 document number: 94365 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 current carrying capability frequency units 50 hz 280 180 440 330 4730 3630 a 400 hz 310 200 470 300 2500 1850 1000 hz 320 200 480 310 1530 1090 2500 hz 340 210 490 320 840 580 recovery voltage v r 50 50 50 v voltage before turn-on v d v drm v drm v drm rise of on-state current di/dt 50 - - a/s case temperature 608560856085c equivalent values for rc circuit 22/0.15 22/0.15 22/0.15 ?? f on-state conduction parameter symbol test conditions values units maximum average on-state current ? at case temperature i t(av) 180 conduction, half sine wave 105 a 85 c maximum rms on-state current i t(rms) dc at 76 c case temperature 165 a maximum peak, one half cycle, ? non-repetitive surge current i tsm t = 10 ms no voltage reapplied sinusoidal half wave, ? initial t j = t j maximum 3000 t = 8.3 ms 3150 t = 10 ms 100 % v rrm reapplied 2530 t = 8.3 ms 2650 maximum i 2 t for fusing i 2 t t = 10 ms no voltage reapplied 45 ka 2 s t = 8.3 ms 41 t = 10 ms 100 % v rrm reapplied 32 t = 8.3 ms 29 maximum i 2 ? t for fusing i 2 ? t t = 0.1 to 10 ms, no voltage reapplied 450 ka 2 ? s maximum peak on -state voltage v tm i tm = 300 a, t j = t j maximum, ? t p = 10 ms sine wave pulse 1.73 v low level value of threshold voltage v t(to)1 (16.7 % x ? x i t(av) < i < ? x i t(av) ), ? t j = t j maximum 1.32 high level value of threshold voltage v t(to)2 (i > ? x i t(av) ), t j = t j maximum 1.35 low level value of forward slope resistance r t1 (16.7 % x ? x i t(av) < i < ? x i t(av) ), ? t j = t j maximum 1.40 m ? high level value of forward slope resistance r t2 (i > ? x i t(av) ), t j = t j maximum 1.30 maximum holding current i h t j = 25 c, i t > 30 a 600 ma typical latchi ng current i l t j = 25 c, v a = 12 v, r a = 6 ? , i g = 1 a 1000 switching parameter symbol test conditions values units maximum non-repe titive rate of ? rise of turned on current di/dt t j = t j maximum, v drm = rated v drm , i tm = 2 x di/dt 1000 a/s typical delay time t d t j = 25 c, v dm = rated v drm , i tm = 50 a dc, t p = 1 s ? resistive load, gate pulse: 10 v, 5 ? source 0.80 s maximum turn-off time minimum t q t j = t j maximum, i tm = 100 a, commutating di/dt = 10 a/s ? v r = 50 v, t p = 200 s, dv/dt: see table in device code 10 maximum 25 180 el i tm 180 el i tm 100 s i tm
vs-st103sp series www.vishay.com vishay semiconductors revision: 11-mar-14 3 document number: 94365 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note ? the table above shows the increment of thermal resistance r thjc when devices operate at different conduction angles than dc blocking parameter symbol test conditions values units maximum critical rate of rise of ? off-state voltage dv/dt t j = t j maximum, linear to 80 % v drm , ? higher value available on request 500 v/s maximum peak reverse and off-state ? leakage current i rrm , i drm t j = t j maximum, rated v drm /v rrm applied 30 ma triggering parameter symbol test conditions values units maximum peak gate power p gm t j = t j maximum, f = 50 hz, d% = 50 40 w maximum average gate power p g(av) 5 maximum peak positi ve gate current i gm t j = t j maximum, t p ? 5 ms 5a maximum peak positi ve gate voltage +v gm 20 v maximum peak negati ve gate voltage -v gm 5 maximum dc gate curren t required to trigger i gt t j = 25 c, v a = 12 v, r a = 6 ? 200 ma maximum dc gate voltag e required to trigger v gt 3v maximum dc gate curr ent not to trigger i gd t j = t j maximum, rated v drm applied 20 ma maximum dc gate volt age not to trigger v gd 0.25 v thermal and mechanical specifications parameter symbol test conditions values units maximum junction operating ? temperature range t j -40 to 125 c maximum storage temperature range t stg -40 to 150 maximum thermal resistance, ? junction to case r thjc dc operation 0.195 k/w maximum thermal resistance, ? case to heatsink r thcs mounting surface, smooth , flat and greased 0.08 mounting torque, 10 % non-lubricated threads 15.5 (137) n m (lbf ?? in) lubricated threads 14 (120) approximate weight 130 g case style see dimensions - link at the end of datasheet to-209ac (to-94) ? r thjc conduction conduction angle sinusoidal conduction rectangular conduction test conditions units 180 0.034 0.025 t j = t j maximum k/w 120 0.040 0.042 90 0.052 0.056 60 0.076 0.079 30 0.126 0.127
vs-st103sp series www.vishay.com vishay semiconductors revision: 11-mar-14 4 document number: 94365 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - current ratings ch aracteristics fig. 2 - current ratings characteristics fig. 3 - on-state powe r loss characteristics fig. 4 - on-state powe r loss characteristics 110 100 90 80 130 030 60 90 maximum allowable case temperature (c) average on-state current (a) 10 40 70 20 50 80 120 60 30 90 120 180 100 110 st103s series r thjc (dc) = 0.195 k/w ? conduction angle 060 120 180 maximum allowable case temperature (c) average on-state current (a) 20 80 140 40 100 160 30 60 90 120 180 110 100 90 70 130 120 80 ? conduction period dc st103s series r thjc (dc) = 0.195 k/w 0 20 40 60 80 100 120 140 160 180 maximum average on-state power loss (w) average on-state current (a) 030 60 90 10 40 70 20 50 80 100 110 180 120 90 60 30 rms limit conduction angle st083s series t j = 125 c ? 0 20 40 60 80 100 120 140 160 180 maximum average on-state power loss (w) 25 50 75 100 125 maximum allowable ambient temperature (c) 0.2 k/w r thsa = 0.1 k/w - r 0.3 k/w 0.4 k/w 0.5 k/w 0.8 k/w 1.2 k/w 0 20 40 60 80 100 120 140 160 180 maximum average on-state power loss (w) average on-state current (a) 0 60 40 20 80 100 120 180 120 90 60 30 rms limit conduction angle st103s series t j = 125 c dc 200 220 240 260 140 160 180 ? 0 20 40 60 80 100 120 140 160 180 maximum average on-state power loss (w) 200 220 240 260 maximum allowable ambient temperature (c) 25 50 75 100 125 0.2 k/w r thsa = 0.1 k/w - r 0.3 k/w 0.4 k/w 0.5 k/w 0.8 k/w 1.2 k/w
vs-st103sp series www.vishay.com vishay semiconductors revision: 11-mar-14 5 document number: 94365 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - maximum non-re petitive surge current fig. 6 - maximum non-re petitive surge current fig. 7 - on-state volt age drop characteristics fig. 8 - thermal impedance z thjc characteristic fig. 9 - reverse recovered charge characteristics fig. 10 - reverse recovery current characteristics 1200 1 10 100 1400 1800 2000 2400 2600 2800 number of equal amplitude half cycle current pulses (n) peak half sine wave on-state current (a) st103s series initial t j = 125 c at 60 hz 0.0083 s at 50 hz 0.0100 s 2200 1600 at any rated load condition and with rated v rrm applied following surge 1200 0.01 0.1 1 1400 1800 2000 2400 2600 3000 pulse train duration (s) peak half sine wave on-state current (a) st103s series no voltage reapplied rated v rrm reapplied 2200 1600 2800 maximum non repetitive surge current versus pulse train duration. control of conduction may not be maintained. initial t j = 125 c 100 123456 1000 10 000 t j = 25 c t j = 125 c instantaneous on-state current (a) instantaneous on-state voltage (v) st103s series 0.01 0.01 0.1 1 10 0.001 0.1 1 square wave pulse duration (s) z thjc - transient thermal impedance (k/w) st103s series steady state value r thjc = 0.195 k/w (dc operation) 20 20 10 30 40 50 60 70 80 90 100 40 60 80 100 120 140 160 st103s series t j = 125 c di/dt - rate of fall of on-state current (a/s) q rr - maximum reverse recovery charge (c) i tm = 500 a i tm = 300 a i tm = 200 a i tm = 100 a i tm = 50 a 10 20 30 40 50 60 70 80 90 100 110 120 i rr - maximum reverse recovery current (a) di/dt - rate of fall of forward current (a/s) st103s series t j = 125 c 20 10 30 40 50 60 70 80 90 100 i tm = 500 a i tm = 300 a i tm = 200 a i tm = 100 a i tm = 50 a
vs-st103sp series www.vishay.com vishay semiconductors revision: 11-mar-14 6 document number: 94365 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 11 - frequency characteristics fig. 12 - frequency characteristics fig. 13 - frequency characteristics 100 10 100 1000 10 000 1000 10 000 pulse basewidth (s) peak on-state current (a) snubber circuit r s = 22 c s = 0.15 f v d = 80 % v drm t p st103s series sinusoidal pulse t c = 60 c 50 hz 100 200 400 1000 2000 5000 10 000 100 10 100 1000 10 000 1000 10000 pulse basewidth (s) peak on-state current (a) t p st103s series sinusoidal pulse t c = 85 c 50 hz 100 200 400 1000 2000 5000 10 000 snubber circuit r s = 22 c s = 0.15 f v d = 80 % v drm 10 100 1000 10 000 100 1000 10 000 pulse basewidth (s) peak on-state current (a) snubber circuit r s = 22 c s = 0.15 f v d = 80 % v drm st103s series trapezoidal pulse t c = 60 c di/dt = 50 a/s t p 5000 2500 1500 1000 400 200 100 50 hz 10 100 1000 10 000 100 1000 10 000 pulse basewidth (s) peak on-state current (a) snubber circuit r s = 22 c s = 0.15 f v d = 80 % v drm st103s series trapezoidal pulse t c = 85 c di/dt = 50 a/s t p 50 hz 100 200 400 1000 1500 2500 5000 10 100 1000 10 000 100 1000 10 000 pulse basewidth (s) peak on-state current (a) snubber circuit r s = 22 c s = 0.15 f v d = 80 % v drm st103s series trapezoidal pulse t c = 60 c di/dt = 100 a/s t p 50 hz 100 200 400 1000 1500 2500 5000 10 000 10 100 1000 10 000 pulse basewidth (s) peak on-state current (a) 100 1000 10 000 50 hz 400 2500 100 1500 200 5000 10 000 1000 snubber circuit r s = 22 c s = 0.15 f v d = 80 % v drm st103s series trapezoidal pulse t c = 85 c di/dt = 100 a/s t p
vs-st103sp series www.vishay.com vishay semiconductors revision: 11-mar-14 7 document number: 94365 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 14 - maximum on-state energy power loss characteristics fig. 15 - gate characteristics pulse basewidth (s) peak on-state current (a) 10 100 1000 10 000 10 100 1000 10 000 t p st103s series sinusoidal pulse 100 000 0.1 0.2 0.5 2 3 1 5 10 20 joules per pulse pulse basewidth (s) peak on-state current (a) 10 100 1000 10 000 10 100 1000 10 000 100 000 0.1 0.2 0.5 2 3 1 5 10 20 joules per pulse t p st103s series rectangular pulse di/dt = 50 a/s 0.1 1 10 100 0.001 instantaneous gate current (a) instantaneous gate voltage (v) 0.01 0.1 1 10 100 v gd i gd (1) (2) (3) device: st103s series (4) frequency limited by p g(av) t j = 25 c t j = 40 c t j = 125 c (a) (b) rectangular gate pulse a) recommended load line for rated di/dt: 20 v, 10 ; t r 1 s b) recommended load line for 30 % rated di/dt: 10 v, 10 t r 1 s (1) p gm = 10 w, t p = 20 ms (2) p gm = 20 w, t p = 10 ms (3) p gm = 40 w, t p = 5 ms (4) p gm = 60 w, t p = 3.3 ms
vs-st103sp series www.vishay.com vishay semiconductors revision: 11-mar-14 8 document number: 94365 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table links to related documents dimensions www.vishay.com/doc?95003 - thyristor 2 - essential part number 3 - 3 = fast turn-off 4 - s = compression bonding stud 5 - voltage code x 100 = v rrm (see voltage ratings table) 6 - p = stud base 1/2"-20unf-2a 7 - reapplied dv/dt code (for t q test conditions) 8 -t q code 9 - 0 = eyelet terminals (gate and aux. cathode leads) 1 = fast-on terminals (gate and aux. cathode leads) dv/dt - t q combinations available dv/dt (v/s) 20 50 100 200 400 10 12 15 18 20 25 cn cm cl cp ck dn dm dl dp dk fl* fm fn* ek ep el em en hp hl hm fk fp hj hk - - - - - t q (s) * standard part number. all other types available only on request. device code 5 1 3 2 4 6 7 8 9 10 11 st 10 3 s 08 p f n 0 p 11 10 vs- 1 - vishay semiconductors product - none = standard production - p = lead (pb)-free
document number: 95003 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 30-sep-08 1 to-209ac (to-94) for st 083s and st103s series outline dimensions vishay semiconductors dimensions in millimeters (inches) ceramic housing 1/2"-20unf-2a sw 27 red shrink red cathode red silicon rubber 12.5 (0.49) max. 29 (1.14) max. 21 (0.83) max. 157 (6.18) 170 (6.69) 70 (2.75) min. ? 4.3 (0.17) ? 8.5 (0.33) 16.5 (0.65) max. 29.5 (1.16) max. c.s. 0.4 mm 2 white shrink (0.0006 s.i.) ? 22.5 (0.88) max. white gate 215 10 (8.46 0.39) c.s. 16 mm 2 (0.025 s.i.) flexible lead 2.6 (0.10) max. 9.5 (0.37) min. 20 (0.79) min.
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